Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

ABSTRACT

In one implementation, a plasma etching method comprises forming a Ge x Se y  chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge x Se y  chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the Ge x Se y  comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the Ge x Se y  chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the Ge x Se y  chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.

TECHNICAL FIELD

This invention relates to methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes, and to plasma etching methods.

BACKGROUND OF THE INVENTION

Semiconductor fabrication continues to strive to make individual electronic components smaller and smaller, resulting in ever denser integrated circuitry. One type of integrated circuitry comprises memory circuitry where information is stored in the form of binary data. The circuitry can be fabricated such that the data is volatile or non-volatile. Volatile memory circuitry loses stored data when power is interrupted, while non-volatile memory circuitry retains stored data even when power is interrupted.

U.S. Pat. Nos. 5,761,115; 5,896,312; 5,914,893; and 6,084,796 to Kozicki et al. disclose what is referred to as a programmable metallization cell. Such a cell includes opposing electrodes having an insulating dielectric material received therebetween. Received within the dielectric material is a variable resistance material. The resistance of such material can be changed between low resistance and high resistance states. In its normal high resistance state, to perform a write operation, a voltage potential is applied to a certain one of the electrodes, with the other of the electrodes being held at zero voltage or ground. The electrode having the voltage applied thereto functions as an anode, while the electrode held at zero or ground functions as a cathode. The nature of the resistance variable material is such that it undergoes a change at a certain applied voltage. When such a voltage is applied, a low resistance state is induced into the material such that electrical conduction can occur between the top and bottom electrodes.

Once this has occurred, the low resistance state is retained even when the voltage potential has been removed. Such material can be returned to its highly resistive state by reversing the voltage potential between the anode and cathode. Again, the highly resistive state is maintained once the reverse voltage potentials are removed. Accordingly, such a device can, for example, function as a programmable memory cell of memory circuitry.

The preferred resistance variable material received between the electrodes typically and preferably comprises a chalcogenide material having metal ions diffused therein. One specific example includes one or more layers of germanium selenide (Ge_(x)Se_(y)) having silver ions diffused therein.

Currently, etching of germanium selenide (Ge_(x)Se_(y)) is conducted using a halogen containing etching gas, for example chlorine, fluorine, or compounds which include elemental chlorine and/or fluorine. However, such etching methods have limitations, and there remains a need for new plasma etching methods, and for additional methods of forming memory devices comprising a chalcogenide comprising layer.

While the invention was principally motivated in addressing the above issues, it is in no way so limited. The artisan will appreciate applicability of the invention in other aspects unrelated to the above issues, with the invention only being limited by the accompanying claims as literally worded without limiting reference to the specification, and as appropriately interpreted in accordance with the doctrine of equivalents.

SUMMARY

Methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate a pair of conductive electrodes are described. Plasma etching methods are also described. In one implementation, a Ge_(x)Se_(y) chalcogenide comprising layer is formed over a substrate. A pair of conductive electrodes is provided operably proximate the Ge_(x)Se_(y) chalcogenide comprising layer. Plasma etching of the Ge_(x)Se_(y) chalcogenide comprising layer is conducted utilizing an etching gas comprising at least one of NH₃, N₂H₄ and C_(x)H_(y).

In one implementation, a method includes forming a Ge_(x)Se_(y) chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge_(x)Se_(y) chalcogenide comprising layer. The mask comprises a first sidewall. The Ge_(x)Se_(y) chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. Such forms a layer on the first sidewall and forms a second sidewall laterally outward of the first sidewall. The plasma etching forms a substantially vertical sidewall of the Ge_(x)Se_(y) chalcogenide comprising layer which is aligned with a lateral outermost extent of the second sidewall.

In one implementation, a plasma etching method comprises forming a Ge_(x)Se_(y) chalcogenide comprising layer over a substrate. A mask comprising an organic masking material is formed over the Ge_(x)Se_(y) chalcogenide comprising layer. The mask comprises a sidewall. At least prior to plasma etching the Ge_(x)Se_(y) comprising layer, the sidewall of the mask is exposed to a fluorine comprising material. After said exposing, the Ge_(x)Se_(y) chalcogenide comprising layer is plasma etched using the mask and a hydrogen containing etching gas. The plasma etching forms a substantially vertical sidewall of the Ge_(x)Se_(y) chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below with reference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a semiconductor wafer fragment at one processing step in accordance with one aspect of the invention.

FIG. 2 is a view of the FIG. 1 wafer fragment at a processing step subsequent to that shown by FIG. 1.

FIG. 3 is a view of the FIG. 2 wafer fragment at a processing step subsequent to that shown by FIG. 2.

FIG. 4 is a diagrammatic sectional view of a semiconductor wafer fragment at one processing step in accordance with one aspect of the invention.

FIG. 5 is a view of the FIG. 4 wafer fragment at a processing step subsequent to that shown by FIG. 4.

FIG. 6 is a view of the FIG. 4 wafer fragment at a processing step subsequent to that shown by FIG. 4.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).

Preferred embodiments of methods of forming memory devices, and methods of forming germanium selenide comprising structures are described with reference to FIGS. 1-6. FIG. 1 depicts a semiconductor wafer fragment 10, for example comprising a bulk monocrystalline silicon substrate 12. In the context of this document, the term “semiconductive substrate” or “semiconductor substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other material). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above. Further, in the context of this document, the term “layer” refers to both the singular and plural unless otherwise indicated.

A layer 14 is formed over the substrate 12. Example preferred materials for layer 14 include silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). A conductive electrode layer 16 is formed over the layer 14. Exemplary materials are conductively doped polysilicon and silver. A Ge_(x)Se_(y) chalcogenide comprising layer 18 is formed over the electrode layer 16. The variables “x” and “y” represent preferred molar fractions, preferably each ranging from about 0.1 to about 0.9, and together totaling 1.0. However, additional components might be included. In one preferred embodiment, the Ge_(x)Se_(y) chalcogenide comprising layer 18 consists essentially of Ge_(x)Se_(y). A conductive electrode layer 20 is formed over the Ge_(x)Se_(y) chalcogenide comprising layer 18. Exemplary materials are conductively doped polysilicon and silver.

Referring to FIG. 2, a mask 22 has been formed over the conductive electrode layer 20, and accordingly over layers 18, 16 and 14. Mask 22 preferably comprises an organic masking material, for example organic photoresist. Mask 22 could of course comprise multiple materials and/or layers. Mask 22 has substantially vertical sidewalls 19 and 21. In the context of this document “substantially vertical” means within about 10 degrees of vertical. The substrate 12 is placed in any suitable plasma reactor for plasma etching. The use of any suitable existing or yet-to-be developed plasma reactor is contemplated. Aspects of the invention were reduced to practice using a LAM inductively coupled high-density plasma reactor, using a top inductive coil power of 400 Watts, and a bottom bias power of 200 Watts. Preferred pressure is from about 1 mTorr to about 400 mTorr, with 20 mTorr being a specific example. The substrate holder is preferably cooled during etching, with the substrate preferably reaching a temperature of from about 60° C. to about 70° C.

Referring to FIG. 3, layers 20, 18 and 16 have been etched. Any suitable etching chemistry and method, whether existing or yet-to-be developed, can be used for etching materials in layers 20 and 16. In accordance with one aspect of the invention, Ge_(x)Se_(y) chalcogenide comprising layer 18 is plasma etched utilizing an etching gas comprising at least one of NH₃, N₂H₄ and C_(x)H_(y) (for example, CH₄). Any C_(x)H_(y) gas which might be utilized can be straight-chained or ringed. Combinations of these hydrogen containing gases, with or without other hydrogen containing gases (i.e., H₂), can also be utilized. Of course, additional non-hydrogen containing reactive or inert gases can also be utilized. In one implementation, the etching gas comprises at least any two of NH₃, N₂H₄ and C_(x)H_(y). In one preferred implementation, the etching gas consists essentially of NH₃, which it not to be interpreted as precluding presence of non-chemically reactive components in the etching gas.

The depicted FIG. 3 preferred embodiment shows such plasma etching being effective to form substantially vertical sidewalls 23 and 25 of the Ge_(x)Se_(y) chalcogenide comprising layer 18, and which are aligned with the substantially vertical sidewalls 19 and 21, respectively, of mask 22. Further in the depicted embodiment, electrode layers 16 and 20 likewise have respective vertical sidewalls which are also so respectively aligned.

The plasma etching of the Ge_(x)Se_(y) chalcogenide comprising layer using the preferred etching gas or gases is preferably selective to certain various exposed materials that might otherwise constitute a part of the substrate. In the context of this document, a selective etch, or selectivity, is defined to mean the removal of the Ge_(x)Se_(y) chalcogenide comprising layer at a rate of at least 3:1 to that of another stated material. By way of example only, selectivity in such plasma etching is expected relative to SiO₂, Si₃N₄, titanium and tungsten. An example etching gas feeding to the above-described LAM reactor in such etching includes an NH₃ flow of from 1 sccm to 100 sccm, with from about 10 sccm to 50 sccm being more preferred. Additional carrier, physically acting and/or other chemically reactive gases might also be utilized in the context of the invention. Etching selectivity using ammonia and within the above stated parameters has been obtained at 100:1 to undoped silicon dioxide, 40:1 to Si₃N₄, 10:1 to titanium and 4:1 to tungsten. The Ge_(x)Se_(y) material etched consisted essentially of Ge₂₅Se₇₅.

In FIG. 3, the above-described processing results in the formation of an exemplary memory device 27 having a pair of conductive electrodes 16 and 20 formed operably proximate the Ge_(x)Se_(y) chalcogenide comprising layer 18. Any other fabrication methods are contemplated (i.e., with or without masking), whether existing or yet-to-be developed, in accordance with the claims as literally worded without interpretative or other limiting reference to the specification, and in accordance with the doctrine of equivalents.

Another exemplary embodiment is described with reference to FIGS. 4 and 5. Like numerals from the first-described embodiment are utilized where appropriate, with differences being indicated by the suffix “a” or with different numerals. Referring to FIG. 4, a mask 30 comprising an organic masking material is formed over, and on as shown, Ge_(x)Se_(y) chalcogenide comprising layer 18. An exemplary material for mask 30 includes an organic photoresist, for example as described above in connection with the first described embodiment. Mask 30 comprises at least one first sidewall, with two sidewalls 32 and 34 being shown. Such are typically and preferably substantially vertical.

Referring to FIG. 5, Ge_(x)Se_(y) chalcogenide comprising layer 18 is plasma etched using a hydrogen containing etching gas. Exemplary and preferred hydrogen containing gases are NH₃, H₂, N₂H₄ and C_(x)H_(y) (for example, CH₄). Any C_(x)H_(y) gas which might be utilized can be straight-chained or ringed. Combinations of these hydrogen containing gases, with or without other hydrogen containing gases, can also be utilized. Of course, additional non-hydrogen containing reactive or inert gases can also be utilized. In one implementation, the etching gas comprises at least any two of NH₃, N₂H₄ and C_(x)H_(y). In one preferred implementation, the etching gas consists essentially of NH₃, which it not to be interpreted as precluding presence of non-chemically reactive components in the etching gas. Preferred processing conditions are the same as those referred to above with respect to the first-described embodiment.

Such plasma etching may form layers 36 and 38 that are received laterally outward of first sidewalls 32 and 34, respectively, and which have sidewalls 40 and 42, respectively. Sidewalls 40 and 42 would typically be formed to be arcuate at shown, and are accordingly not substantially vertical in one embodiment. Regardless, sidewalls 40 and 42 can be considered as having lateral outermost extents 37 and 39. The illustrated etching of Ge_(x)Se_(y) chalcogenide comprising layer 18 forms substantially vertical sidewalls 44 and 46 of the Ge_(x)Se_(y) chalcogenide comprising layer 18 a which are aligned with second sidewall lateral outermost extents 37 and 39, respectively. By no way of limitation, it is theorized that perhaps the lateral side surfaces of the organic masking material, such as photoresist, are catalyzing decomposition of etching products from layer 18, and which apparently rapidly deposit an organic material 36, 38 on the sidewalls, and which can result in the depicted FIG. 5 etch.

FIG. 5 depicts but one exemplary alternate embodiment of forming a mask, here comprising materials 36, 30 and 38. The Ge_(x)Se_(y) chalcogenide comprising layer 18 is plasma etched using mask 36/30/38 and a hydrogen containing etching gas as described above, with such etching forming a substantially vertical sidewall (i.e., at least one of sidewalls 44, 46) of the Ge_(x)Se_(y) chalcogenide comprising layer 18 a.

By way of example only, another alternate embodiment is described with reference to FIG. 6. Like numerals from the second-described embodiment are utilized where appropriate, with differences being indicated with the suffix “b” or with different numerals. Sidewalls 32 and 34 can be considered as having lateral outermost extents 33 and 35, respectively. In the illustrated preferred embodiment, extents 33 and 35 are coincident with substantially all of walls 32 and 34 due to the substantially vertical nature of such walls. FIG. 6 is similar to the FIG. 5 embodiment, except sidewalls 32 and 34 of mask 30 have been exposed to a fluorine comprising material at least prior to the plasma etching of the Ge_(x)Se_(y) chalcogenide comprising layer 18 b. By way of example only, exemplary fluorine comprising materials include F₂, CF₄ and NF₃. Preferably, the fluorine exposing is to a fluorine comprising plasma using, for example, any one or combination of the above preferred gases. A reduction-to-practice example included the feeding of CF₄ at 5 sccm and He at 100 sccm for about 5 seconds at the conditions referred to above. By way of example only, and in no way of limitation, it is theorized that some form of fluorine atom adherence/passivation occurs to the sidewalls of the masking material which may preclude or restrict such sidewalls from catalyzing decomposition of the etching product that formed the polymer material 36, 38 of FIG. 5. Therefore, the exemplary FIG. 6 embodiment etching in one preferred embodiment can result in substantially vertical sidewalls 44 b and 46 b which are aligned with lateral outermost extents 33 and 35 of sidewalls 32 and 34, respectively, of mask 30.

In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. 

1-19. Canceled.
 20. A plasma etching method comprising the acts of: forming a Ge_(x)Se_(y) chalcogenide comprising layer over a substrate; forming a mask over the Ge_(x)Se_(y) chalcogenide comprising layer, the mask comprising a sidewall; plasma etching the Ge_(x)Se_(y) chalcogenide comprising layer in the presence of an etching gas, the etching gas comprising at least one of NH₃, N₂H₄, and C_(x)H_(y), the plasma etching forming a substantially vertical sidewall of the Ge_(x)Se_(y) chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
 21. The method of claim 20, wherein the act of forming the mask comprises forming the sidewall to be substantially vertical.
 22. The method of claim 20, further comprising the act of exposing the mask sidewall to a fluorine comprising material prior to the plasma etching act.
 23. The method of claim 22, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma.
 24. The method of claim 23, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from F₂.
 25. The method of claim 23, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from CF₄.
 26. The method of claim 23, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from NF₃.
 27. The method of claim 20, further comprising forming an SiO₂ layer between the substrate and the Ge_(x)Se_(y) chalcogenide comprising layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the SiO₂.
 28. The method of claim 20, further comprising forming an Si₃N₄ layer between the substrate and the Ge_(x)Se_(y) chalcogenide comprising layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the Si₃N₄.
 29. The method of claim 20, further comprising forming an titanium layer between the substrate and the Ge_(x)Se_(y) chalcogenide comprising layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the titanium.
 30. The method of claim 20, further comprising forming an tungsten layer between the substrate and the Ge_(x)Se_(y) chalcogenide comprising layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the tungsten.
 31. The method of claim 20, wherein the etching gas comprises H₂.
 32. The method of claim 20, wherein the etching gas comprises NH₃.
 33. The method of claim 20, wherein the etching gas comprises N₂H₄.
 34. The method of claim 20, wherein the etching gas comprises CH₄.
 35. The method of claim 20, wherein the etching gas comprises C_(x)H_(y).
 36. The method of claim 20, wherein the etching gas comprises at least two of NH₃, N₂H₄ and C_(x)H_(y).
 37. A method of forming a memory device, the method comprising the acts of: forming a first conductive electrode layer over a substrate; forming a Ge_(x)Se_(y) chalcogenide comprising layer over a the first conductive electrode; forming a mask over the Ge_(x)Se_(y) chalcogenide comprising layer, the mask comprising a sidewall; plasma etching the Ge_(x)Se_(y) chalcogenide comprising layer in the presence of at least one of NH₃, N₂H₄, and C_(x)H_(y), the plasma etching forming a substantially vertical sidewall of the Ge_(x)Se_(y) chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
 38. The method of claim 37, wherein the act of forming the first conductive electrode layer comprises forming the first conductive electrode layer comprising silver.
 39. The method of claim 37, wherein the act of forming the first conductive electrode layer comprises forming the first conductive electrode layer comprising polysilicon.
 40. The method of claim 37, further comprising the act of forming a second conductive electrode layer over the Ge_(x)Se_(y) chalcogenide comprising layer.
 41. The method of claim 40, wherein the act of forming the mask comprises forming the mask over the second conductive electrode layer.
 42. The method of claim 40, wherein the act of forming the second conductive electrode layer comprises forming the second conductive electrode layer comprising silver.
 43. The method of claim 40, wherein the act of forming the second conductive electrode layer comprises forming the second conductive electrode layer comprising polysilicon.
 44. The method of claim 37, further comprising the act of exposing the mask sidewall to a fluorine comprising material prior to the plasma etching act.
 45. The method of claim 44, wherein the fluorine comprising material comprises F₂.
 46. The method of claim 44, wherein the fluorine comprising material comprises CF₄.
 47. The method of claim 44, wherein the fluorine comprising material comprises NF₃.
 48. The method of claim 37, further comprising the act of exposing the mask sidewall to a fluorine comprising plasma prior to the plasma etching act.
 49. The method of claim 48, wherein the exposing comprises exposing the mask sidewall to a fluorine comprising plasma.
 50. The method of claim 48, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from F₂.
 51. The method of claim 48, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from CF₄.
 52. The method of claim 48, wherein the exposing act comprises exposing the mask sidewall to a fluorine comprising plasma derived at least from NF₃.
 53. The method of claim 37, wherein the act of forming the mask comprises forming the sidewall to be substantially vertical.
 54. The method of claim 37, further comprising forming an SiO₂ layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the SiO₂.
 55. The method of claim 37, further comprising forming an Si₃N₄ layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the Si₃N₄.
 56. The method of claim 37, further comprising forming an titanium layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the titanium.
 57. The method of claim 37, further comprising forming an tungsten layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the tungsten.
 58. The method of claim 37, wherein the etching gas comprises H₂.
 59. The method of claim 37, wherein the etching gas comprises NH₃.
 60. The method of claim 37, wherein the etching gas comprises N₂H₄.
 61. The method of claim 37, wherein the etching gas comprises CH₄.
 62. The method of claim 37, wherein the etching gas comprises C_(x)H_(y).
 63. The method of claim 37, wherein the etching gas comprises at least two of NH₃, N₂H₄ and C_(x)H_(y).
 64. A method of forming a memory device, the method comprising the acts of: forming a first conductive electrode layer over a substrate; forming a Ge_(x)Se_(y) chalcogenide comprising layer over a the first conductive electrode; forming a second conductive electrode layer over the Ge_(x)Se_(y) chalcogenide comprising layer; forming a mask over the second conductive electrode layer, the mask comprising a sidewall; and plasma etching the first and second conductive electrode layers and the Ge_(x)Se_(y) chalcogenide comprising layer in the presence of at least one of NH₃, N₂H₄, and C_(x)H_(y), the plasma etching forming a substantially vertical sidewall of the Ge_(x)Se_(y) chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.
 65. The method of claim 64, wherein the act of forming the mask comprises forming the sidewall to be substantially vertical.
 66. The method of claim 64, further comprising forming an SiO₂ layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the SiO₂.
 67. The method of claim 64, further comprising forming an Si₃N₄ layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the Si₃N₄.
 68. The method of claim 64, further comprising forming an titanium layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the titanium.
 69. The method of claim 64, further comprising forming an tungsten layer between the substrate and the first conductive electrode layer, wherein the plasma etching selectively etches the Ge_(x)Se_(y) chalcogenide comprising layer relative to the tungsten.
 70. The method of claim 64, wherein the etching gas comprises at least two of NH₃, N₂H₄ and C_(x)H_(y). 